| PART |
Description |
Maker |
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| FR1J FR1D FR1G FR1B FR1A FR1M |
Fast Switching Surface Mount Si-Rectifiers 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
|
Shanghai Sunrise Electronics Co., LTD.
Diotec Semiconductor AG
|
| MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
| CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
| MMBD7000LT1 ON2085 |
Dual Switching Diode
DUAI SWITCHING DIODE
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
| SKD83 SKD83_04 SKD83_08 SKD83_12 SKD83_14 SKD83_16 |
Power Bridge Rectifiers 3 PHASE, 83 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Power Bridge Rectifiers 3 PHASE, 83 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
Power Bridge Rectifiers 3 PHASE, 83 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Power Bridge Rectifiers 3 PHASE, 83 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Power Bridge Rectifiers 3 PHASE, 83 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
|
Semikron International
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| M1MA142KT1G M1MA141KT1 M1MA142KT1 M1MA141K M1MA142 |
SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
Single Switching Diode
|
ONSEMI[ON Semiconductor]
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay
|
